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MMUN2233LT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 246MW SOT23-3
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Inventory: 17340
Minimum: 1
Total Price: USD $0.01
Unit Price: USD $0.006573
≥1 USD $0.006573
≥10 USD $0.00638
≥100 USD $0.006186
≥500 USD $0.005945

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3

Technical

Packaging Cut Tape (CT)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 246mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMUN22**L
Pin Count 3
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 246mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω

Dimensions

Height 940μm
Length 2.9mm
Width 1.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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