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RN1421TE85LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 50V 0.8A SMINI
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Inventory: 2712
Minimum: 1
Total Price: USD $0.41
Unit Price: USD $0.40656
≥1 USD $0.40656
≥10 USD $0.28644
≥100 USD $0.144421
≥500 USD $0.127993
≥1000 USD $0.099607

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3

Technical

Packaging Tape & Reel (TR)
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Base Part Number RN142*
Polarity NPN
Element Configuration Single
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA 1V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 2mA, 50mA
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 300MHz
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 1 k Ω

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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