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DTD123TSTP

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package SC-72 Formed Leads
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 300MW SPT
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature DIGITAL
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 300mW
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTD123
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 2.2 k Ω
VCEsat-Max 0.3 V

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