RN2402S,LF

Toshiba Semiconductor and Storage

RoHS

RoHS compliant

Package TO-236-3, SC-59, SOT-23-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Description Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 200mW 4.7k

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Number of Pins 59

Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Packaging Cut Tape (CT)

Published 2014

Part Status Discontinued

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1

Max Power Dissipation 200mW

Terminal Position DUAL

Terminal Form GULL WING

Reach Compliance Code unknown

Base Part Number RN240*

JESD-30 Code R-PDSO-G3

Number of Elements 1

Polarity PNP

Configuration SINGLE WITH BUILT-IN RESISTOR

Power Dissipation 200mW

Transistor Application SWITCHING

Transistor Type PNP - Pre-Biased

Collector Emitter Voltage (VCEO) 300mV

Max Collector Current 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V

Current - Collector Cutoff (Max) 500nA

Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA

Collector Emitter Breakdown Voltage 50V

Transition Frequency 200MHz

Max Breakdown Voltage 50V

Frequency - Transition 200MHz

Resistor - Base (R1) 10 k Ω

Continuous Collector Current -100mA

Resistor - Emitter Base (R2) 10 k Ω

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