RN1441ATE85LF

Toshiba Semiconductor and Storage

RoHS

Package TO-236-3, SC-59, SOT-23-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Description Bipolar Transistors - Pre-Biased BRT NPN Single 300mA IC 20V VCEO

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Supplier Device Package S-Mini

Compliance

RoHS Status RoHS Compliant

Technical

Packaging Cut Tape (CT)

Published 2014

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Power Dissipation 200mW

Polarity NPN

Element Configuration Single

Power - Max 200mW

Transistor Type NPN - Pre-Biased

Collector Emitter Voltage (VCEO) 100mV

Max Collector Current 300mA

DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 4mA 2V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30mA

Collector Emitter Breakdown Voltage 20V

Voltage - Collector Emitter Breakdown (Max) 20V

Current - Collector (Ic) (Max) 300mA

Max Breakdown Voltage 20V

Frequency - Transition 30MHz

Emitter Base Voltage (VEBO) 25V

hFE Min 200

Resistor - Base (R1) 5.6 kOhms

Continuous Collector Current 300mA

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