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FJN4309RTA

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Transistors Switching - Resistor Biased PNP Si Transistor Epitaxial
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Inventory: 96104
Minimum: 1
Total Price: USD $0.02
Unit Price: USD $0.020388
≥1 USD $0.020388
≥10 USD $0.019789
≥100 USD $0.019189
≥500 USD $0.018439

Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg

Technical

Packaging Tape & Box (TB)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR
HTS Code 8541.21.00.95
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -40V
Max Power Dissipation 300mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FJN4309
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current -100mA

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free
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