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PDTD113ES,126

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 500MW TO92-3
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Technical

Packaging Tape & Box (TB)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PDTD113
Power - Max 500mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 1 k Ω

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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