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Transistors - Bipolar (BJT) - Single, Pre-Biased
FJN3312RTA

FJN3312RTA

ON Semiconductor

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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Description TRANS PREBIAS NPN 300MW TO92-3

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package TO-92-3

Technical

Packaging Tape & Box (TB)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 300mW

Transistor Type NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) 40V

Current - Collector (Ic) (Max) 100mA

Frequency - Transition 250MHz

Resistor - Base (R1) 47 kOhms

Alternative Model

STMicroelectronics

SI7216DN-T1-GE3

Vishay Siliconix

Vishay Semiconductor Diodes Division

Micro Commercial Co

Vishay Semiconductor Diodes Division

Diodes Incorporated

Microsemi Corporation

Taiwan Semiconductor Corporation

Microsemi Corporation

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