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FJN3315RBU

ON Semiconductor
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 300MW TO92-3
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3

Technical

Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 300mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms

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