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Transistors - Bipolar (BJT) - Single, Pre-Biased
FJNS3207RTA

FJNS3207RTA

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 Short Body

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Description TRANS PREBIAS NPN 300MW TO92S

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Inventory: 1467

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 Short Body

Technical

Packaging Tape & Box (TB)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 300mW

Transistor Type NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA

Voltage - Collector Emitter Breakdown (Max) 50V

Current - Collector (Ic) (Max) 100mA

Frequency - Transition 250MHz

Resistor - Base (R1) 22 k Ω

Resistor - Emitter Base (R2) 47 k Ω

Alternative Model

ON Semiconductor

Micro Commercial Co

WeEn Semiconductors

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation

Microsemi Corporation

Vishay Semiconductor Diodes Division

Vishay Semiconductor Diodes Division

Microsemi Corporation

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