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Transistors - Bipolar (BJT) - Single, Pre-Biased
BCR 133F B6327

BCR 133F B6327

Infineon Technologies

RoHS

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Package SOT-723

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Description TRANS PREBIAS NPN 250MW TSFP-3

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Inventory: 2382

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Technical Details

Physical

Mounting Type Surface Mount

Package / Case SOT-723

Technical

Packaging Tape & Reel (TR)

Published 2011

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Base Part Number BCR133

Power - Max 250mW

Transistor Type NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA

Voltage - Collector Emitter Breakdown (Max) 50V

Current - Collector (Ic) (Max) 100mA

Frequency - Transition 130MHz

Resistor - Base (R1) 10 k Ω

Resistor - Emitter Base (R2) 10 k Ω

Alternative Model

BBY 53-02W E6327

Infineon Technologies

Infineon Technologies

TIP117 TIN/LEAD

Central Semiconductor Corp

WeEn Semiconductors

Diodes Incorporated

Comchip Technology

Microsemi Corporation

Microsemi Corporation

Microsemi Corporation

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