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MUN2111T3G

ON Semiconductor
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 230MW SC59
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Technical

Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation 230mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN2111
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 230mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 35
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free
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