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RN1309(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
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Inventory: 943
Minimum: 1
Total Price: USD $0.25
Unit Price: USD $0.24948
≥1 USD $0.24948
≥10 USD $0.173712
≥100 USD $0.084546
≥500 USD $0.070557

Technical Details

Supply Chain

Factory Lead Time 11 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Base Part Number RN130*
Polarity NPN
Element Configuration Single
Power Dissipation 100mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 70
Resistor - Base (R1) 47 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 22 k Ω

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