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RN1116(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SC-75, SOT-416
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 0.1W SSM
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Inventory: 157
Minimum: 1
Total Price: USD $0.26
Unit Price: USD $0.25872
≥1 USD $0.25872
≥10 USD $0.176484

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

RoHS Status RoHS Compliant

Technical

Packaging Tape & Reel (TR)
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signals
Max Power Dissipation 100mW
Number of Elements 1
Power - Max 100mW
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 10 k Ω

Alternative Model

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