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RN1102T5LFT

Toshiba Semiconductor and Storage
RoHS
/
Package SC-75, SOT-416
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Trans Digital BJT NPN 50V 100mA 3-Pin SSM T/R
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Inventory: 6540
Minimum: 1
Total Price: USD $0.03
Unit Price: USD $0.028423
≥1 USD $0.028423
≥500 USD $0.020897
≥1000 USD $0.017417
≥2000 USD $0.015978
≥5000 USD $0.014927
≥10000 USD $0.013886
≥15000 USD $0.013432
≥50000 USD $0.013208

Technical Details

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Base Part Number RN110*
Polarity NPN
Element Configuration Single
Power - Max 100mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms

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