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RN1314(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
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Inventory: 3779
Minimum: 1
Total Price: USD $1.41
Unit Price: USD $1.409468
≥1 USD $1.409468
≥10 USD $1.1571
≥100 USD $1.12119
≥500 USD $1.084283
≥1000 USD $1.048373

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Base Part Number RN131*
Polarity NPN
Element Configuration Single
Power Dissipation 100mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 50
Resistor - Base (R1) 1 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3

Alternative Model

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