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WNSC201200CWQ

WeEn Semiconductors
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description SILICON CARBIDE POWER DIODE
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Inventory: 59
Minimum: 1
Total Price: USD $11.17
Unit Price: USD $11.171143
≥1 USD $11.171143
≥10 USD $10.743966
≥100 USD $10.004993

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reference Standard IEC-60134
JESD-30 Code R-PSFM-T3
Operating Temperature (Max) 175°C
Number of Elements 2
Configuration COMMON CATHODE, 2 ELEMENTS
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 110μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.6V @ 10A
Case Connection CATHODE
Operating Temperature - Junction 175°C Max
Output Current-Max 10A
Application EFFICIENCY
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 20A
Number of Phases 1
Reverse Recovery Time 0ns
Rep Pk Reverse Voltage-Max 1200V
Capacitance @ Vr, F 510pF @ 1V 1MHz
Non-rep Pk Forward Current-Max 110A
Reverse Current-Max 400μA
Reverse Test Voltage 1200V

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO

Compliance

RoHS Status RoHS Compliant

Alternative Model

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