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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description PUMD9/ZLZ
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Technical Details

Physical

Surface Mount YES
Transistor Element Material SILICON

Technical

Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 6
JESD-30 Code R-PDSO-G6
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Collector Current-Max (IC) 0.1A
DC Current Gain-Min (hFE) 100
Collector-Emitter Voltage-Max 50V
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