Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series Z-FET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 62.5W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 370m Ω @ 6A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1.25mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 259pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 10A
Threshold Voltage 2.8V