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IXFH36N60P

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 36A TO-247
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Inventory: 362
Minimum: 1
Total Price: USD $17.42
Unit Price: USD $17.419343
≥1 USD $17.419343
≥10 USD $14.293178
≥100 USD $13.846298
≥500 USD $13.399418
≥1000 USD $12.953535
≥3000 USD $11.612895

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarHT?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 36A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 650W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 650W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 5V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.19Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 1500 mJ

Dimensions

Height 21.46mm
Length 16.26mm
Width 5.3mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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