Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series HiPerFET?, Polar3?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3kW
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 98A Tc
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 98A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 245A
Avalanche Energy Rating (Eas) 2000 mJ