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Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH DFN-3
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Technical Details

Physical

Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.0425Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.9W

Compliance

RoHS Status ROHS3 Compliant
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