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IPB80N04S403JEATMA1

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V TO263
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Technical

Operating Temperature -55°C~155°C TJ
Series OptiMOS?-T2
Part Status Obsolete
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 94W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 53μA
Input Capacitance (Ciss) (Max) @ Vds 5260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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