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R6035ENZM12C8

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 35A TO PKG
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack

Technical

Operating Temperature 150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 102m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2.72nF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

Compliance

RoHS Status ROHS3 Compliant

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