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TPH3206LSGB

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Package 3-PowerDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description GANFET N-CH 600V PQFN
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 3-PowerDFN

Technical

Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Technology GaNFET (Gallium Nitride)
Power Dissipation-Max 81W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 480V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 8V
Vgs (Max) ±18V

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