BS108,126

NXP USA Inc.

RoHS

RoHS compliant

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET N-CH 200V 300MA SOT54

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount NO

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Box (TB)

Published 2001

JESD-609 Code e3

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish Matte Tin (Sn)

HTS Code 8541.29.00.95

Subcategory FET General Purpose Power

Technology MOSFET (Metal Oxide)

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Pin Count 3

JESD-30 Code O-PBCY-T3

Qualification Status Not Qualified

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 1W Ta

Operating Mode ENHANCEMENT MODE

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 5 Ω @ 100mA, 2.8V

Vgs(th) (Max) @ Id 1.8V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V

Current - Continuous Drain (Id) @ 25°C 300mA Ta

Drain to Source Voltage (Vdss) 200V

Drive Voltage (Max Rds On,Min Rds On) 2.8V

Vgs (Max) ±20V

Drain Current-Max (Abs) (ID) 0.3A

Drain-source On Resistance-Max 5Ohm

DS Breakdown Voltage-Min 200V

Feedback Cap-Max (Crss) 15 pF

Compliance

RoHS Status ROHS3 Compliant

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