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Transistors - FETs, MOSFETs - Single
BUK7505-30A,127

BUK7505-30A,127

RoHS

RoHS compliant

Package TO-220-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET N-CH 30V 75A TO220AB

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-220-3

Surface Mount NO

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tube

Published 1999

Series TrenchMOS?

JESD-609 Code e3

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish Matte Tin (Sn)

Subcategory FET General Purpose Power

Technology MOSFET (Metal Oxide)

Terminal Position SINGLE

Peak Reflow Temperature (Cel) NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Pin Count 3

JESD-30 Code R-PSFM-T3

Qualification Status Not Qualified

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 230W Tc

Operating Mode ENHANCEMENT MODE

Case Connection DRAIN

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V

Vgs(th) (Max) @ Id 4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V

Current - Continuous Drain (Id) @ 25°C 75A Tc

Drain to Source Voltage (Vdss) 30V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

JEDEC-95 Code TO-220AB

Drain Current-Max (Abs) (ID) 75A

Drain-source On Resistance-Max 0.005Ohm

Pulsed Drain Current-Max (IDM) 400A

DS Breakdown Voltage-Min 30V

Avalanche Energy Rating (Eas) 500 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

Infineon Technologies

IPD60R650CEAUMA1

Infineon Technologies

IPP60R060P7XKSA1

Infineon Technologies

STMicroelectronics

Advanced Linear Devices Inc.

Broadcom Limited

Taiwan Semiconductor Corporation

Vishay Semiconductor Diodes Division

Microsemi Corporation

BZX384C8V2-E3-08

Vishay Semiconductor Diodes Division

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