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PHM25NQ10T,518

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package 8-VDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 30.7A 8HVSON
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code unknown
Pin Count 8
JESD-30 Code R-PDSO-N8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 62.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 20V
Current - Continuous Drain (Id) @ 25°C 30.7A Tc
Gate Charge (Qg) (Max) @ Vgs 26.6nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 30.7A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 170 mJ
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