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IXFH42N60P3

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 42A TO247
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Inventory: 3692
Minimum: 1
Total Price: USD $4.93
Unit Price: USD $4.933635
≥1 USD $4.933635
≥10 USD $4.047855
≥100 USD $3.92217
≥500 USD $3.795488
≥1000 USD $3.668805

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?, Polar3?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 830W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 185m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.185Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 100A

Dimensions

Height 21.46mm
Length 16.26mm
Width 5.3mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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