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IXTQ36N30P

IXYS
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 300V 36A TO-3P
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Inventory: 14702
Minimum: 1
Total Price: USD $12
Unit Price: USD $12.002918
≥1 USD $12.002918
≥10 USD $9.848318
≥100 USD $9.54009
≥500 USD $9.23286
≥1000 USD $8.924633
≥3000 USD $8.001945

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHT?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 97 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.11Ohm
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 90A
Avalanche Energy Rating (Eas) 1000 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

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