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IXFP3N120

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description IXYS SEMICONDUCTOR IXFP3N120 MOSFET Transistor, N Channel, 3 A, 120 V, 4.5 ohm, 10 V, 5 V
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Inventory: 5170
Minimum: 1
Total Price: USD $7.71
Unit Price: USD $7.70616
≥1 USD $7.70616
≥10 USD $6.151622
≥100 USD $5.504083
≥500 USD $4.856525
≥1000 USD $4.37088
≥3000 USD $4.095676

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4.5Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 1.2kV
Avalanche Energy Rating (Eas) 700 mJ

Alternative Model

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