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STP35N60DM2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description STMICROELECTRONICS STP35N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
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Inventory: 1172
Minimum: 1
Total Price: USD $1.4
Unit Price: USD $1.398142
≥1 USD $1.398142
≥10 USD $1.35702
≥100 USD $1.315898
≥500 USD $1.264496

Technical Details

Supply Chain

Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh? DM2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP35N
Power Dissipation-Max 210W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 100V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 28A
Threshold Voltage 4V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3

Alternative Model

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