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IXTQ36N50P

IXYS
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 36A TO-3P
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Inventory: 442
Minimum: 1
Total Price: USD $9.94
Unit Price: USD $9.94224
≥1 USD $9.94224
≥10 USD $8.048345
≥100 USD $7.574952
≥500 USD $6.864775
≥1000 USD $6.296654

Technical Details

Supply Chain

Factory Lead Time 5 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHV?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 170mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 36A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 540W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 540W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 108A
Avalanche Energy Rating (Eas) 1500 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

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