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TK31N60X,S1F

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
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Inventory: 69
Minimum: 1
Total Price: USD $1.53
Unit Price: USD $1.534879
≥1 USD $1.534879
≥10 USD $1.489735
≥100 USD $1.444592
≥500 USD $1.388162

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series DTMOSIV-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Number of Channels 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Turn On Delay Time 55 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 88m Ω @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V
Current - Continuous Drain (Id) @ 25°C 30.8A Ta
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 30.8A
Gate to Source Voltage (Vgs) 30V
FET Feature Super Junction

Compliance

RoHS Status RoHS Compliant

Alternative Model

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