Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?, Polar3?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1040W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.1Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 150A
Avalanche Energy Rating (Eas) 1000 mJ