Operating Temperature 150°C TJ
Packaging Tube
Published 2012
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 80 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 19.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
Current - Continuous Drain (Id) @ 25°C 38.8A Ta
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 38.8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.065Ohm
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 608 mJ