TP2535N3-G

Microchip Technology

RoHS

RoHS compliant

Package TO-226-3, TO-92-3 (TO-226AA)

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET,P-CHANNEL ENHANCEMENT-MODE,-350V,25 Ohm3 TO-92BAG

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Inventory: 780

Minimum: 1

Total Price: USD $1.68

Unit Price: USD $1.68168

≥1 USD $1.68168

Technical Details

Supply Chain

Factory Lead Time 5 Weeks

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA)

Number of Pins 3

Weight 453.59237mg

Transistor Element Material SILICON

Dimensions

Height 5.33mm

Length 5.21mm

Width 4.19mm

Technical

Operating Temperature -55°C~150°C TJ

Packaging Bulk

Published 2013

JESD-609 Code e3

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Resistance 25Ohm

Terminal Finish Matte Tin (Sn)

Additional Feature LOGIC LEVEL COMPATIBLE

Subcategory Other Transistors

Technology MOSFET (Metal Oxide)

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) NOT APPLICABLE

Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE

Qualification Status Not Qualified

Number of Elements 1

Number of Channels 1

Power Dissipation-Max 740mW Ta

Element Configuration Single

Operating Mode ENHANCEMENT MODE

Power Dissipation 740mW

Turn On Delay Time 10 ns

FET Type P-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 25 Ω @ 100mA, 10V

Vgs(th) (Max) @ Id 2.4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V

Current - Continuous Drain (Id) @ 25°C 86mA Tj

Rise Time 10ns

Drain to Source Voltage (Vdss) 350V

Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V

Vgs (Max) ±20V

Fall Time (Typ) 10 ns

Turn-Off Delay Time 20 ns

Continuous Drain Current (ID) -86mA

Gate to Source Voltage (Vgs) 20V

Drain Current-Max (Abs) (ID) 0.086A

Drain to Source Breakdown Voltage -350V

Feedback Cap-Max (Crss) 25 pF

Compliance

RoHS Status ROHS3 Compliant

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