Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 7?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 33A
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 520W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection ISOLATED
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 3000 mJ