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FQP3N80C

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 800V N-Ch Q-FET advance C-Series
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Inventory: 7589
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.28304
≥1 USD $0.28304
≥10 USD $0.267015
≥100 USD $0.2519
≥500 USD $0.237649
≥1000 USD $0.224198

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON

Dimensions

Height 9.4mm
Length 10.1mm
Width 4.7mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 4.8Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 3A
Number of Elements 1
Power Dissipation-Max 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Rise Time 43.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 22.5 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 800V
Dual Supply Voltage 800V
Nominal Vgs 5 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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