Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 4.5A
Drain-source On Resistance-Max 0.9Ohm
Pulsed Drain Current-Max (IDM) 13.5A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 81 mJ