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TK6A80E,S4X

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
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Inventory: 74
Minimum: 1
Total Price: USD $1.64
Unit Price: USD $1.63548
≥1 USD $1.63548
≥10 USD $1.311341
≥100 USD $1.078862
≥500 USD $0.912893
≥1000 USD $0.77458
≥3000 USD $0.735855

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series π-MOSVIII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Turn On Delay Time 55 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V

Compliance

RoHS Status RoHS Compliant

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Weight 6.000006g

Alternative Model

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