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TK56A12N1,S4X

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 120V 56A TO-220
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Inventory: 189
Minimum: 1
Total Price: USD $1.8
Unit Price: USD $1.8018
≥1 USD $1.8018
≥10 USD $1.448647
≥100 USD $1.191868
≥500 USD $1.008527
≥1000 USD $0.855716
≥3000 USD $0.812935

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Weight 6.000006g

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Turn On Delay Time 45 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 60V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 120V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 4.2nF
Drain to Source Resistance 6.2mOhm
Rds On Max 7.5 mΩ

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