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AUIRF3205

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 110A TO-220AB
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Inventory: 1181
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.150151
≥1 USD $0.150151
≥10 USD $0.145734
≥100 USD $0.141318
≥500 USD $0.135798

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 9.02mm
Length 10.67mm
Width 4.83mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Power Dissipation 200W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Rise Time 101ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V

Alternative Model

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