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RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 600V 61.8A TO-3P(N)
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Inventory: 125
Minimum: 1
Total Price: USD $14.12
Unit Price: USD $14.11872
≥1 USD $14.11872
≥10 USD $11.42988
≥100 USD $10.757578
≥500 USD $9.749051
≥1000 USD $8.942232

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Supplier Device Package TO-3P(N)

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Power Dissipation 400W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 38mOhm @ 30.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 3.1mA
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 300V
Current - Continuous Drain (Id) @ 25°C 61.8A Ta
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 58ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 310 ns
Continuous Drain Current (ID) 61.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 6.5nF
FET Feature Super Junction
Drain to Source Resistance 33mOhm
Rds On Max 38 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
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