Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating -74A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 99ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 64 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) -74A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 42A
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage -55V
Pulsed Drain Current-Max (IDM) 280A
Dual Supply Voltage 55V
Nominal Vgs 4 V