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NVMFS5A160PLZWFT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description -60V7.7MOHMSINGLE
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Inventory: 6262
Minimum: 1
Total Price: USD $16.91
Unit Price: USD $16.914608
≥1 USD $16.914608
≥10 USD $13.879215
≥100 USD $13.445303
≥500 USD $13.01139
≥1000 USD $12.577478
≥3000 USD $11.276738

Technical Details

Supply Chain

Factory Lead Time 41 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.8W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 50 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 7.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7700pF @ 20V
Current - Continuous Drain (Id) @ 25°C 15A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 645 ns
Continuous Drain Current (ID) -15A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 335 mJ
Max Junction Temperature (Tj) 175°C

Dimensions

Height 1.1mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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