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SIA449DJ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-70-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 12A SC70-6
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Inventory: 80332
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.153791
≥1 USD $0.153791
≥10 USD $0.149267
≥100 USD $0.144744
≥500 USD $0.13909

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6
Number of Pins 6
Transistor Element Material SILICON

Dimensions

Height 750μm
Length 2.05mm
Width 2.05mm

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2140pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) -1.5V
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 30A

Alternative Model

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