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NTD20P06LT4G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 60V 15.5A 3-Pin(2+Tab) DPAK T/R
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Inventory: 31070
Minimum: 1
Total Price: USD $0.79
Unit Price: USD $0.79002
≥1 USD $0.79002
≥10 USD $0.648375
≥100 USD $0.627428
≥500 USD $0.607478
≥1000 USD $0.587528
≥3000 USD $0.52668

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 2.38mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 130mOhm
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -15A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 65W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15.5A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Rise Time 90ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 15.5A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 50A
Nominal Vgs -1.5 V

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