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TPN3300ANH,LQ

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 9.4A 8TSON
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Inventory: 13687
Minimum: 1
Total Price: USD $0.78
Unit Price: USD $0.77616
≥1 USD $0.77616
≥10 USD $0.63294
≥100 USD $0.492492
≥500 USD $0.417463
≥1000 USD $0.340069

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Capacitance 680pF
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta 27W Tc
Element Configuration Single
Power Dissipation 27W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 50V
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 4.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.8 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 9.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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