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SISS64DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8S
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CHANNEL 30V 40A 1212-8S
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Inventory: 985
Minimum: 1
Total Price: USD $0.47
Unit Price: USD $0.473888
≥1 USD $0.473888
≥10 USD $0.45995
≥100 USD $0.446012
≥500 USD $0.42859

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8S
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2018
Series TrenchFET? Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.8W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3420pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 37A
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.00286Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 45 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 1.17mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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